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RZF013P01TL +BOM

Power MOSFET with Efficient 1.5V Drive

RZF013P01TL General Description

Product RZF013P01TL stands out for its innovative design and advanced features that make it a top choice for those looking to optimize their energy usage. The MOSFETs included in this product are specially crafted to provide exceptional performance while ensuring minimal power consumption, making them ideal for use in a variety of mobile devices. Whether you require a compact design for space-saving purposes, a high-power option for demanding applications, or a complex configuration for specialized projects, this product has you covered

ROHM Semiconductor Inventory

Application

SWITCHING

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 1.3 A Rds On - Drain-Source Resistance 260 mOhms
Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 300 mV
Qg - Gate Charge 2.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 800 mW
Channel Mode Enhancement Series RZF013P01
Configuration Single Fall Time 9 ns
Height 0.85 mm Length 2 mm
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel MOSFET Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 8 ns Width 1.7 mm
Part # Aliases RZF013P01 Unit Weight 0.000212 oz

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