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See Technical Specifications

RZR020P01TL +BOM

Low voltage power MOSFET drive

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RZR020P01TL
Datasheet:

RZR020P01TL Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

12 V
Current - Continuous Drain (Id) @ 25°C:

2A (Ta)
EDA/CAD Models:

Request Free CAD Models for RZR020P01TL

RZR020P01TL General Description

Get ready to elevate your off-road experience with the Polaris RZR020P01TL. From its rugged design to its state-of-the-art features, this machine is built to surpass expectations and fuel your sense of adventure. Climb aboard, buckle up, and prepare for adrenaline-fueled thrills like never before

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V	Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	Rds On (Max) @ Id, Vgs	105mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	770 pF @ 6 V
Power Dissipation (Max)	1W (Ta)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	RZR020