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RZM001P02T2L +BOM

Transistor with P-Channel enhancement mode

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RZM001P02T2L
Datasheet:

RZM001P02T2L Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for RZM001P02T2L

RZM001P02T2L General Description

MOSFET, P-CH, -20V, -0.1A, VMT; Transistor Polarity: P Channel; Continuous Drain Current Id: -100mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 150mW; Transistor Case Style: VMT; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	0.1 A	Drain-source On Resistance-Max	3.8 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	0.15 W	Surface Mount	YES
Terminal Finish	Tin (Sn)	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	100 mA	Rds On - Drain-Source Resistance	3.8 Ohms
Vgs - Gate-Source Voltage	- 10 V, + 10 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	150 mW
Channel Mode	Enhancement	Series	RZM001P02
Fall Time	137 ns	Forward Transconductance - Min	120 ms
Height	0.55 mm	Length	1.3 mm
Product	MOSFETs	Product Type	MOSFET
Rise Time	62 ns	Factory Pack Quantity	8000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	Small Signal MOSFET	Typical Turn-Off Delay Time	325 ns
Typical Turn-On Delay Time	46 ns	Width	0.9 mm
Part # Aliases	RZM001P02	Unit Weight	0.000282 oz