Payment Method
SI1031R-T1-GE3 +BOM
Trans MOSFET P-CH 20V 0.14A 3-Pin SC-75A T/R
SC-75A-
Manufacturer:
-
Mfr.Part #:
SI1031R-T1-GE3
-
Datasheet:
-
Series:
TrenchFET®
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain To Source Voltage (Vdss):
20 V
-
EDA/CAD Models:
Availability: 3449 PCS
Please fill in the short form below and we will provide you the quotation immediately.
SI1031R-T1-GE3 General Description
MOSFET, P, SC-75A; Transistor Polarity: P Channel; Continuous Drain Current Id: 140mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 20ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 250mW; Transistor Case Style: SC-75; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jun-2015); Alternate Case Style: SOT-416; Current Id Max: -140mA; ESD HBM: 2kV; External Depth: 1.7mm; External Length / Height: 0.8mm; External Width: 1.6mm; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 250W; Pulse Current Idm: 500mA; SMD Marking: H; Voltage Vds Typ: -20V; Voltage Vgs Max: 6V; Voltage Vgs Rds on Measurement: 1.5V; Voltage Vgs th Max: -1.2V; Voltage Vgs th Min: -0.4V
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | TrenchFET® |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 140mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V |
Vgs (Max) | ±6V | FET Feature | - |
Power Dissipation (Max) | 250mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI1031 |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | TrenchFET | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | P |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 20 |
feature-maximum-gate-source-voltage-v | ±6 | feature-maximum-gate-threshold-voltage-v | |
feature-maximum-continuous-drain-current-a | 0.14 | feature-maximum-drain-source-resistance-mohm | [email protected] |
feature-typical-gate-charge-vgs-nc | [email protected] | feature-typical-gate-charge-10v-nc | |
feature-typical-input-capacitance-vds-pf | feature-typical-output-capacitance-pf | ||
feature-maximum-power-dissipation-mw | 250 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 3 | |
feature-cecc-qualified | No | feature-esd-protection | Yes |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | No | feature-svhc-exceeds-threshold | No |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 3,449
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI1031R-T1-GE3, guaranteed quotes back within 12hr.