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Si8824EDB-T2-E1 +BOM
MOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
XFBGA-4-
Manufacturer:
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Mfr.Part #:
Si8824EDB-T2-E1
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Datasheet:
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Series:
TrenchFET®
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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EDA/CAD Models:
Availability: 6212 PCS
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Si8824EDB-T2-E1 General Description
N-Channel 20 V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | TrenchFET® |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | Rds On (Max) @ Id, Vgs | 75mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
Vgs (Max) | ±5V | Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V |
FET Feature | - | Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI8824 |
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Si8824EDB-T2-E1 Datasheet PDF
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In Stock: 6,212
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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