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STB11N65M5 +BOM

Power Field-Effect Transistor

Manufacturer:

ST
Mfr.Part #:

STB11N65M5
Datasheet:

STB11N65M5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

130 mJ
EDA/CAD Models:

Request Free CAD Models for STB11N65M5

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STB11N65M5 General Description

The STB11N65M5 N-channel Power MOSFET leverages the innovative MDmesh™ M5 technology and PowerMESH™ layout to deliver exceptional performance. Characterized by extremely low on-resistance, this device is designed for applications where high power and efficiency are critical

Key Features

Power electronic device
High-reliability design
Wide operating temperature range
Excellent electromagnetic immunity
Low input capacitance

Specifications

Source Content uid	STB11N65M5	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	130 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	650 V	Drain Current-Max (ID)	9 A
Drain-source On Resistance-Max	0.48 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	85 W
Pulsed Drain Current-Max (IDM)	36 A	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON