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STD100N10F7 +BOM

N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in DPAK package

Manufacturer:

ST
Mfr.Part #:

STD100N10F7
Datasheet:

STD100N10F7 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for STD100N10F7

Email: [email protected]

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Tel: +852 95804164

STD100N10F7 General Description

The STD100N10F7 is a superior N-channel Power MOSFET that incorporates STripFET F7 technology, renowned for its advanced trench gate structure. This innovative design greatly minimizes on-state resistance, providing optimum efficiency in power applications. Additionally, internal capacitance is reduced, along with gate charge, ensuring quick and efficient switching operations

Key Features

Superior EMI immunity
High surge capability
Low thermal resistance

Application

SWITCHING

Specifications

Source Content uid	STD100N10F7	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	400 mJ
Case Connection	ISOLATED	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	32 A
Drain-source On Resistance-Max	0.008 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	120 W	Pulsed Drain Current-Max (IDM)	180 A
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON