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STD10P6F6 +BOM

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package

Manufacturer:

ST
Mfr.Part #:

STD10P6F6
Datasheet:

STD10P6F6 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for STD10P6F6

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

STD10P6F6 General Description

By incorporating the latest advancements in MOSFET technology, the STD10P6F6 stands out as a reliable and versatile solution for power electronics designers. Its low RDS(on) characteristics enable lower conduction losses and improved power handling capabilities, making it a preferred choice for applications where efficiency and reliability are paramount

Key Features

Voltage regulator performance
Current limiting ability
Pulse-by-pulse current control
High surge withstand capability

Application

SWITCHING

Specifications

Source Content uid	STD10P6F6	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	80 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	10 A
Drain-source On Resistance-Max	0.116 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	35 W	Pulsed Drain Current-Max (IDM)	40 A
Surface Mount	NO	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON