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See Technical Specifications

STD13N60M2 +BOM

Power Mosfet - DPAK, N-Channel 600V 0.38 Ohm Surface Mount MDmesh II Plus

Manufacturer:

ST
Mfr.Part #:

STD13N60M2
Datasheet:

STD13N60M2 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for STD13N60M2

Email: [email protected]

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Tel: +852 95804164

STD13N60M2 General Description

STD13N60M2 is a cutting-edge N-channel Power MOSFET, utilizing MDmesh™ M2 technology to deliver exceptional performance. With a unique strip layout and enhanced vertical structure, these devices boast low on-resistance and optimized switching capabilities. This makes them ideal for use in high-efficiency converters where demanding requirements must be met

Key Features

Safe operating area confirmed
High-quality insulation provided
Minimal thermal drift ensured

Application

SWITCHING

Specifications

Source Content uid	STD13N60M2	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	125 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	11 A
Drain-source On Resistance-Max	0.38 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	44 A
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON