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STD18N55M5 +BOM

N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package

Manufacturer:

ST
Mfr.Part #:

STD18N55M5
Datasheet:

STD18N55M5 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STD18N55M5

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STD18N55M5 General Description

The STD18N55M5 represents the epitome of excellence in Power MOSFET technology, thanks to its utilization of MDmesh M5 vertical processing and PowerMESH horizontal layout. Its ultra-low on-resistance sets it apart as a powerhouse in high-power applications, delivering unparalleled efficiency and performance. Whether used in server power supplies, high-voltage motor drives, or solar inverters, this device proves to be a reliable and efficient solution for industries seeking top-tier power management solutions

Key Features

Fast switching speed and response
Low power consumption
Compact size

Application

Power Management
Industrial

Specifications

Source Content uid	STD18N55M5	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	550 V
Drain Current-Max (ID)	14 A	Drain-source On Resistance-Max	0.21 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	90 W
Pulsed Drain Current-Max (IDM)	56 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON