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STD26P3LLH6 +BOM

P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

Manufacturer:

ST
Mfr.Part #:

STD26P3LLH6
Datasheet:

STD26P3LLH6 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for STD26P3LLH6

Email: [email protected]

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Tel: +852 95804164

STD26P3LLH6 General Description

Introducing the STD26P3LLH6, a state-of-the-art P-channel Power MOSFET that leverages the 6th generation of STripFET™ DeepGATE™ technology and incorporates a novel gate structure. This innovative design ensures that the Power MOSFET delivers unmatched performance with the lowest RDS(on) in its class

Key Features

Sophisticated control and precise adjustment
High-speed transmission and reliable data transfer
Ultra-quiet operation in standby mode

Specifications

Source Content uid	STD26P3LLH6	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	350 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	12 A
Drain-source On Resistance-Max	0.045 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	48 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON