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STD6N95K5 +BOM

Silicon N-channel MOSFET

STD6N95K5 General Description

With the STD6N95K5, customers can expect top-notch performance in power delivery and energy efficiency. The MOSFETs are designed to maximize power density while minimizing energy loss, making them an excellent choice for various applications. Thanks to the MDmesh™ K5 technology, these MOSFETs offer unparalleled performance and reliability

Key Features

  • Ultra low leakage current
  • Low noise operation guaranteed
  • DPAK 650V high voltage rating

Application

SWITCHING

Specifications

Source Content uid STD6N95K5 Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 90 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 950 V Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 1.25 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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