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See Technical Specifications

STD7NM80 +BOM

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh Power MOSFET in DPAK package

Manufacturer:

ST
Mfr.Part #:

STD7NM80
Datasheet:

STD7NM80 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STD7NM80

Email: [email protected]

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Tel: +852 95804164

STD7NM80 General Description

STMicroelectronics's proprietary strip technique further enhances the dynamic performance of the STD7NM80, setting it apart from similar products in the market. This innovative approach allows for superior power handling capabilities and efficiency, ensuring that the device meets the stringent requirements of modern power management systems. With the STD7NM80, engineers can confidently design and implement power solutions that deliver unrivaled performance and reliability

Key Features

Rugged design for harsh environments
Fast switching times and low latency
Wide operating temperature range

Specifications

Source Content uid	STD7NM80	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Avalanche Energy Rating (Eas)	240 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	800 V
Drain Current-Max (ID)	6.5 A	Drain-source On Resistance-Max	1.05 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	90 W
Pulsed Drain Current-Max (IDM)	26 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON