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STE50DE100 +BOM

Bipolar Transistors - BJT POWER MOSFET

STE50DE100 General Description

Transistor NPN - Emitter Switched Bipolar 1000V (1kV) 50A Chassis Mount ISOTOP®

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Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Series -
Transistor Type NPN - Emitter Switched Bipolar Current - Collector (Ic) (Max) 50 A
Voltage - Collector Emitter Breakdown (Max) 1000 V Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 400 W Frequency - Transition -
Operating Temperature 150°C (TJ) Mounting Type Chassis Mount
Base Product Number STE50 Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole Transistor Polarity: NPN
Pd - Power Dissipation: 160 W Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C Series: STE50DE100
Packaging: Tube DC Collector/Base Gain hfe Min: 3
DC Current Gain hFE Max: 13 Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 10 Subcategory: Transistors
Technology: Si

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