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SUM110P04-05-E3 +BOM

MOSFET capable of handling 375W of power at 40V

Manufacturer:

Vishay
Mfr.Part #:

SUM110P04-05-E3
Datasheet:

SUM110P04-05-E3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SUM110P04-05-E3

Email: [email protected]

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Tel: +852 95804164

SUM110P04-05-E3 General Description

Whether used in automotive, industrial, or power supply applications, the SUM110P04-05-E3 offers exceptional performance and reliability. Its low on-resistance and high current capability make it an ideal choice for switching and power management tasks. With careful attention to thermal management, this MOSFET can provide long-term, trouble-free operation in demanding scenarios

Key Features

This P-channel MOSFET has a voltage rating of -40V with a maximum drain current of 110A
Low on-resistance and compact TO-263 package enhance thermal performance
Designed for efficient power management in high-current applications

Application

Optimal power handling
Reliable power management
Multipurpose power MOSFET

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	110 A
Rds On - Drain-Source Resistance	5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	185 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	375 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SUM
Configuration	Single	Fall Time	35 ns
Forward Transconductance - Min	75 S	Height	4.83 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	290 ns	Factory Pack Quantity	800
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	110 ns	Typical Turn-On Delay Time	25 ns
Width	9.65 mm	Unit Weight	0.139332 oz