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See Technical Specifications

TJ30S06M3L(T6L1,NQ +BOM

This MOSFET has a maximum current rating of -30A and a maximum voltage rating of -60V

Manufacturer:

Toshiba Semiconductor and Storage
Mfr.Part #:

TJ30S06M3L(T6L1,NQ
Datasheet:

TJ30S06M3L(T6L1,NQ Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

30A (Ta)
EDA/CAD Models:

Request Free CAD Models for TJ30S06M3L(T6L1,NQ

TJ30S06M3L(T6L1,NQ General Description

The TJ30S06M3L(T6L1,NQ) Power MOSFET transistor is a reliable and efficient component for a variety of electronic devices. With a 60-volt drain-source voltage and a 30-ampere continuous drain current, this transistor is well-suited for demanding switching applications. Its low on-resistance of 0.03 ohms ensures minimal power loss and maximum efficiency in operation

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	21.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	+10V, -20V	Input Capacitance (Ciss) (Max) @ Vds	3950 pF @ 10 V
FET Feature	-	Power Dissipation (Max)	68W (Tc)
Operating Temperature	175°C (TJ)	Mounting Type	Surface Mount
Series	U-MOSVI	Base Product Number	TJ30S06