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UJ3C120080K3S +BOM

UJ3C120080K3S is a TO-247 packaged semiconductor offering a maximum voltage of 1.2KV and a current handling capacity of 33A

Manufacturer:

Qorvo
Mfr.Part #:

UJ3C120080K3S
Datasheet:

UJ3C120080K3S Datasheet (PDF)
FET Type:

N-Channel
Technology:

SiCFET (Cascode SiCJFET)
Drain To Source Voltage (Vdss):

1200 V
Current - Continuous Drain (Id) @ 25°C:

33A (Tc)
EDA/CAD Models:

Request Free CAD Models for UJ3C120080K3S

UJ3C120080K3S General Description

Featuring a three-phase common cathode configuration, the UJ3C120080K3S is designed for seamless integration into three-phase applications, providing robust performance even under transient conditions with a surge current capability of up to 800A. The module's wide operating temperature range of -40°C to 175°C makes it suitable for use in harsh environments, and its compliance with industry-standard JEDEC J-STD-020D.1 requirements for moisture sensitivity guarantees reliable operation in diverse conditions

Specifications

FET Type	N-Channel	Technology	SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)	1200 V	Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V	Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 12V
Vgs(th) (Max) @ Id	6V @ 10mA	Gate Charge (Qg) (Max) @ Vgs	51 nC @ 15 V
Vgs (Max)	±25V	Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 100 V
Power Dissipation (Max)	254.2W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	UJ3C120080