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UJ3N065080K3S +BOM

G3 TO-247-3L JFET 650V/80mOhm SiC N-ON JFET REDUCED Rth

UJ3N065080K3S General Description

JFET N-Channel 650 V 32 A 190 W Through Hole TO-247-3

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Specifications

Product Category JFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Configuration Single Vds - Drain-Source Breakdown Voltage 650 V
Vgs - Gate-Source Breakdown Voltage 20 V Id - Continuous Drain Current 32 A
Rds On - Drain-Source Resistance 80 mOhms Pd - Power Dissipation 190 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Series UJ3N Qualification AEC-Q101
Product Type JFETs Factory Pack Quantity 30
Subcategory Transistors Tradename Sic JFET
Unit Weight 0.546358 oz

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