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See Technical Specifications

QPD1015L +BOM

RF JFET Transistors - 65W Power, 50V Voltage, DC to 3.7GHz Frequency Range, 20dB Gain, GaN Technology

Manufacturer:

Qorvo
Mfr.Part #:

QPD1015L
Datasheet:

QPD1015L Datasheet (PDF)
Transistor Type:

HEMT
Technology:

GaN-on-SiC
Operating Frequency:

3.7 GHz
Gain:

20 dB
EDA/CAD Models:

Request Free CAD Models for QPD1015L

Email: [email protected]

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Tel: +852 95804164

QPD1015L General Description

Product FeaturesFrequency: DC to 3.7 GHzOutput Power (P3dB)1: 70 WLinear Gain1: 20 dBTypical PAE3dB1: 74%Operating Voltage: 50 VLow thermal resistance packageCW and Pulse capableNote: 1 @ 2 GHz

Key Features

Frequency: DC to 3.7 GHz
Output Power (P3dB)1: 70 W
Linear Gain1: 20 dB
Typical PAE3dB1: 74%
Operating Voltage: 50 V
Low thermal resistance package
CW and Pulse capable
Note: 1 @ 2 GHz

Specifications

Product Category	RF JFET Transistors	Transistor Type	HEMT
Technology	GaN-on-SiC	Operating Frequency	3.7 GHz
Gain	20 dB	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	50 V	Vgs - Gate-Source Breakdown Voltage	145 V
Id - Continuous Drain Current	2.5 A	Output Power	70 W
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Pd - Power Dissipation	64 W	Mounting Style	Screw Mount
Configuration	Single	Development Kit	QPD1015LPCB401
Moisture Sensitive	Yes	Operating Temperature Range	- 40 C to + 85 C
Product Type	RF JFET Transistors	Series	QPD1015L
Factory Pack Quantity	25	Subcategory	Transistors
Vgs th - Gate-Source Threshold Voltage	- 2.8 V	Unit Weight	0.809714 oz