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UPA801T-T1-A +BOM

Transistor UPA801T-T1-A: Bipolar, RF Small Signal, NPN, 0.1A, 2-Element, S Band

Manufacturer:

CEL
Mfr.Part #:

UPA801T-T1-A
Datasheet:

UPA801T-T1-A Datasheet (PDF)
Transistor Type:

2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):

12V
Frequency - Transition:

4.5GHz
Noise Figure (dB Typ @ F):

1.2dB @ 1GHz
EDA/CAD Models:

Request Free CAD Models for UPA801T-T1-A

UPA801T-T1-A General Description

Compact and surface-mount ready, the UPA801T-T1-A is easy to integrate into circuit boards with limited space, making it ideal for portable devices like smartphones and tablets. Its low supply voltage requirement of around 3.3 volts contributes to reduced power consumption, helping to extend battery life for users on the go. Additionally, the amplifier comes equipped with various protection mechanisms to safeguard against potential damage from overvoltage, overcurrent, and overheating, ensuring the longevity and reliability of the device under diverse operating conditions

Key Features

SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
HIGH COLLECTOR CURRENT: 100mA

Specifications

Transistor Type	2 NPN (Dual)	Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	4.5GHz	Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	9dB	Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 7mA, 3V	Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount