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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PDIP-SB-14Manufacturer:
Mfr.Part #:
VQ1006P
Datasheet:
Technology:
MOSFET (Metal Oxide)
Configuration:
4 N-Channel
FET Feature:
Logic Level Gate
Drain To Source Voltage (Vdss):
90V
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Featuring a Drain Source Voltage (Vds) of 90V and a Continuous Drain Current (Id) of 2A, the VQ1006P MOSFET can handle moderate power levels with ease. Its On Resistance (Rds(on) of 4.5ohm and Rds(on) Test Voltage (Vgs) of 10V ensure minimal power loss and high efficiency in operation
Technology | MOSFET (Metal Oxide) | Configuration | 4 N-Channel |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 90V |
Current - Continuous Drain (Id) @ 25°C | 400mA | Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V | Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
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