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XP162A12A6PR +BOM

XP162A12A6PR is a P Channel MOSFET designed to operate at a voltage of 20V with a power rating of 2W and a maximum current of 2

XP162A12A6PR General Description

The product XP162A12A6PR is a vital component in electrical systems, designed to ensure smooth operation and functionality. Its precise engineering and quality materials make it a reliable choice for various applications. The inclusion of the part number in the product name provides insight into its specifications, aiding in compatibility and ease of use for technicians and engineers. The distinctive coding within the part number hints at the unique features and characteristics of this component, allowing for efficient identification and installation

Key Features

  • Low on-state resistance: Rds(on)=0.25Ω(Vgs=-4.5V)
  • : Rds(on)=0.4Ω(Vgs=-2.5V)
  • Ultra high-speed switching
  • Operational Voltage : -2.5V
  • High density mounting : SOT-89

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Configuration SINGLE
Drain Current-Max (ID) 2.5 A FET Technology METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1 Number of Elements 1
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W Surface Mount YES
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 170mOhm @ 1.5A, 4.5V
Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 10 V
Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Base Product Number XP162A

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