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See Technical Specifications

ZXMHC3A01T8TA +BOM

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE, 1.3 W, RoHS

Manufacturer:

DIODES
Mfr.Part #:

ZXMHC3A01T8TA
Datasheet:

ZXMHC3A01T8TA Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
EDA/CAD Models:

Request Free CAD Models for ZXMHC3A01T8TA

ZXMHC3A01T8TA General Description

The drain source voltage for this MOSFET is 30V, with an on resistance of 0.12ohm at a test voltage of 10V. This low on resistance helps to minimize power loss and improve overall efficiency. The power dissipation for this component is rated at 1.3W, ensuring that it can handle moderate power levels without overheating

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel, P-Channel	Number of Channels	4 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	3.1 A, 2.3 A
Rds On - Drain-Source Resistance	180 mOhms, 330 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V, 3 V	Qg - Gate Charge	3.9 nC, 2.6 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.3 W	Channel Mode	Enhancement
Series	ZXMHC3A	Configuration	Quad
Fall Time	2.3 ns	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	2.3 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	2 N-Channel, 2 P-Channel	Type	Enhancement Mode Dual Channel
Unit Weight	0.002610 oz