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ZXMN10A08E6TA +BOM

The ZXMN10A08E6TA MOSFET is a high-performance component that is ideal for power management systems that require efficient switching capabilities

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ZXMN10A08E6TA General Description

N-Channel 100 V 1.5A (Ta) 1.1W (Ta) Surface Mount SOT-26

Key Features

HIGH RELIABILITY

Application

SWITCHING

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 6 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 78 Weeks
Additional Feature HIGH RELIABILITY Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 3.5 A
Drain-source On Resistance-Max 0.25 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 6 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6.3 W Qualification Status Not Qualified
Reference Standard AEC-Q101 Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 5,224

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.377 $0.38
10+ $0.310 $3.10
30+ $0.281 $8.43
100+ $0.245 $24.50
500+ $0.228 $114.00
1000+ $0.218 $218.00

The prices below are for reference only.

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