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2N2907 +BOM

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18

  • Manufacturer:

    Solid State Inc.

  • Mfr.Part #:

    2N2907

  • Datasheet:

    2N2907 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    600 mA

  • Voltage - Collector Emitter Breakdown (Max):

    40 V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • EDA/CAD Models:

    eda-cad.png Request Free CAD Models for 2N2907

2N2907 General Description

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18

Application

SWITCHING

Specifications

Transistor Type NPN Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 400 mW Frequency - Transition 200MHz
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole

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In Stock: 7,929

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $12.358 $12.36
200+ $4.782 $956.40
500+ $4.615 $2,307.50
1000+ $4.531 $4,531.00

The prices below are for reference only.

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