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2N3415 +BOM

Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3

2N3415 General Description

Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 25 V Collector- Base Voltage VCBO 25 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 500 mA Pd - Power Dissipation 625 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2N3415 Continuous Collector Current 500 mA
DC Collector/Base Gain hfe Min 180 DC Current Gain hFE Max 540
Height 5.33 mm Length 5.2 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2000
Subcategory Transistors Technology Si
Width 4.19 mm Part # Aliases 2N3415_NL
Unit Weight 0.007090 oz

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