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2N3442G +BOM

10 A, 140 V NPN Bipolar Power Transistor

Manufacturer:

onsemi
Mfr.Part #:

2N3442G
Datasheet:

2N3442G Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

140 V
EDA/CAD Models:

Request Free CAD Models for 2N3442G

2N3442G General Description

The 2N3442G is a trusted and versatile NPN Bipolar Power Transistor that is designed to deliver reliable performance in a wide range of applications. With a current rating of 10 A and a voltage rating of 140 V, this transistor is well-suited for use in industrial and commercial equipment, including audio amplifiers, regulators, and power switches. Its robust construction and high-quality materials ensure long-lasting performance and stability, making it a popular choice among engineers and designers seeking a dependable solution for their power electronics needs

Key Features

Low Input Current Drain
Robust ESD Protection Diodes
Thermal Shutdown for Overheat Protection

Application

Industrial
Commercial
Audio
Power Management

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	140 V	Collector- Base Voltage VCBO	160 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	5 V
Maximum DC Collector Current	10 A	Pd - Power Dissipation	117 W
Gain Bandwidth Product fT	80 kHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 200 C	Series	2N3442
Continuous Collector Current	10 A	DC Collector/Base Gain hfe Min	20
Height	8.51 mm	Length	39.37 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	100
Subcategory	Transistors	Technology	Si
Width	26.67 mm	Unit Weight	0.423993 oz