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2N3703 +BOM
Bipolar Junction Transistor, TO-92 Package, PNP Type
TO-92-3-
Manufacturer:
Onsemi
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Mfr.Part #:
2N3703
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Datasheet:
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Mounting Style:
Through Hole
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Transistor Polarity:
PNP
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
30 V
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EDA/CAD Models:
Availability: 7072 PCS
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2N3703 General Description
One standout feature of the 2N3703 is its low collector-emitter saturation voltage, ensuring efficient switching operations without significant power loss. This attribute makes it a go-to choice for applications requiring quick on/off transitions. Moreover, with a low noise figure and high current gain, this transistor excels in low-power amplifier setups
Key Features
- High-speed switching device
- Low voltage applications suitable
- Power amplifier transistors available
Application
- Electronic relays
- Signal amplification
- Multivibrator circuits
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 30 V | Collector- Base Voltage VCBO | 50 V |
Emitter- Base Voltage VEBO | 5 V | Maximum DC Collector Current | 500 mA |
Pd - Power Dissipation | 625 mW | Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Continuous Collector Current | 500 mA | DC Collector/Base Gain hfe Min | 30 |
DC Current Gain hFE Max | 150 | Height | 4.58 mm |
Length | 4.58 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | Subcategory | Transistors |
Technology | Si | Width | 3.86 mm |
Unit Weight | 0.008466 oz |
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In Stock: 7,072
Minimum Order: 1
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