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2N3771G +BOM

2N3771G Transistor by ON Semiconductor

2N3771G General Description

The 20 A, 60 V NPN Bipolar Power Transistor is designed for linear amplifiers, series pass regulators and inductive switching applications.

Key Features

  • Epoxy-Free Molding Compound
  • Rugged Construction for Harsh Environments
  • Robust Electrical Performance
  • SMT Package with Thermal Resistance RθJC = 100°C/W
  • High Temperature Range up to 150°C
  • Excellent Radiation Hardness

Specifications

Status Last Shipments Compliance PbAHP
Case Outline 1-07 MSL Type NA
MSL Temp (°C) 0 Container Type FTRAY
Container Qty. 100 ON Target N
Polarity NPN Type General Purpose
VCE(sat) Max (V) 2 IC Cont. (A) 30
VCEO Min (V) 40 VCBO (V) 50
VEBO (V) 5 VBE(on) (V) 2.7
hFE Min 15 hFE Max 60
fT Min (MHz) 0.2 PTM Max (W) 150
Pricing ($/Unit) Price N/A

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