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2N3904G +BOM
Compact and reliable general-purpose transisto
TO-92-
Manufacturer:
onsemi
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Mfr.Part #:
2N3904G
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Datasheet:
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Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
40 V
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EDA/CAD Models:
Availability: 7072 PCS
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2N3904G General Description
Product 2N3904G is a Bipolar Transistor featuring a Transistor Polarity of NPN, making it suitable for various electronic applications. With a Collector Emitter Voltage (V(br)ceo) of 40V, this transistor provides reliable performance in different circuit configurations. The Collector Emitter Saturation Voltage (Vce(sat)) of only 0.3V ensures efficient operation with minimal power loss
Key Features
- Low Power Consumption for Longer Battery Life
- Integrated Diode for Simplified Design
- Wide Operating Temperature Range for Global Use
- Rugged and Reliable Construction for Demanding Environments
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 300 mV |
Maximum DC Collector Current | 200 mA | Pd - Power Dissipation | 625 mW |
Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 200 mA |
DC Collector/Base Gain hfe Min | 60 | Height | 5.33 mm |
Length | 5.2 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 5000 | Subcategory | Transistors |
Technology | Si | Width | 4.19 mm |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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