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2N3906A +BOM

Transistors - BJT

2N3906A General Description

GENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES• Low Leakage Current   : ICEX=-50nA(Max.), IBL=-50nA(Max.)      @VCE=-30V, VEB=-3V.• Low Saturation Voltage   : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.• Low Collector Output Capacitance   : Cob=4.5pF(Max.) @VCB=5V.• Complementary to 2N3904A.

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 40 V Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 600 mW Gain Bandwidth Product fT 250 MHz
DC Collector/Base Gain hfe Min 60 at 100 uA, 1 V Product Type BJTs - Bipolar Transistors
Subcategory Transistors Technology Si

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