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2N3963 +BOM

Small Signal Bipolar Transistor with 0.2A I(C) and 45V V(BR)CEO

Manufacturer:

Tt Electronics
Mfr.Part #:

2N3963
Datasheet:

2N3963 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

80 V
EDA/CAD Models:

Request Free CAD Models for 2N3963

2N3963 General Description

Efficiency is a key feature of the 2N3963 transistor, thanks to its low collector-emitter saturation voltage of 0.5 V at 10 mA collector current. This characteristic ensures minimal power loss and improved energy efficiency, making it a cost-effective solution for power-sensitive applications. Furthermore, the low noise figure of the transistor enhances signal clarity and fidelity, making it a reliable choice for low-noise amplification tasks where precision is paramount

Key Features

High frequency response
Low thermal sensitivity
Excellent linearity

Application

Compact size
Automotive use
Multiple functions

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	80 V	Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	250 mV
Pd - Power Dissipation	360 mW	Gain Bandwidth Product fT	40 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	- 200 mA	DC Collector/Base Gain hfe Min	100 at - 10 uA, - 5 V
DC Current Gain hFE Max	300 at - 10 uA, - 5 V	Product Type	BJTs - Bipolar Transistors
Subcategory	Transistors	Technology	Si