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2N4029 +BOM

Bipolar (BJT) Transistor PNP 80 V 1 A 500 mW Through Hole TO-18

2N4029 General Description

Bipolar (BJT) Transistor PNP 80 V 1 A 500 mW Through Hole TO-18

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Collector Current-Max (IC) 1 A Collector-Emitter Voltage-Max 80 V
Configuration SINGLE DC Current Gain-Min (hFE) 25
JEDEC-95 Code TO-206AA JESD-30 Code O-MBCY-W3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 200 °C
Polarity/Channel Type PNP Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form WIRE Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 210 ns Turn-on Time-Max (ton) 40 ns

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In Stock: 5,350

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $22.206 $22.21
200+ $8.861 $1,772.20
500+ $8.564 $4,282.00
1000+ $8.420 $8,420.00

The prices below are for reference only.

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