This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2N4123 +BOM

Boxed Product 2N4123

Manufacturer:

Onsemi
Mfr.Part #:

2N4123
Datasheet:

2N4123 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

30 V
EDA/CAD Models:

Request Free CAD Models for 2N4123

2N4123 General Description

One of the key highlights of the 2N4123 is its current gain (hfe) range of 40 to 120 at a collector current of 10mA, making it suitable for low to medium power applications. Additionally, the transistor boasts a transition frequency (ft) of 150MHz, indicating its capability to perform reliably at high frequencies without compromising performance

Key Features

Excellent frequency response achieved
Precise control over output signal
Ergonomic design for easy handling

Application

Oscillators
Amplifiers
Power supplies

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	30 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V	Maximum DC Collector Current	200 mA
Pd - Power Dissipation	625 mW	Gain Bandwidth Product fT	250 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Continuous Collector Current	200 mA	DC Collector/Base Gain hfe Min	50
DC Current Gain hFE Max	150	Height	4.7 mm
Length	4.7 mm	Product Type	BJTs - Bipolar Transistors
Subcategory	Transistors	Technology	Si
Width	3.93 mm	Unit Weight	0.008466 oz