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See Technical Specifications

2N4124 +BOM

25V 625mW 120@2mA,1V 200mA NPN TO-92(TO-226) Bipolar Transistors - BJT ROHS

Manufacturer:

Onsemi
Mfr.Part #:

2N4124
Datasheet:

2N4124 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

25 V
EDA/CAD Models:

Request Free CAD Models for 2N4124

Email: [email protected]

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Tel: +852 95804164

2N4124 General Description

Whether you're designing a new electronic circuit or replacing a transistor in an existing system, the 2N4124 offers reliable performance and efficiency. Its NPN configuration allows for easy integration into various circuit designs, and its robust construction ensures long-lasting stability

Key Features

Pb-Free Packages are Available

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	25 V	Collector- Base Voltage VCBO	30 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	200 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	200 mA
DC Collector/Base Gain hfe Min	120	Height	5.33 mm
Length	5.2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Width	4.19 mm