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2N4220 +BOM

This small signal FET transistor boasts exceptional frequency performance and low noise figure for precise contro

Manufacturer:

Interfet
Mfr.Part #:

2N4220
Datasheet:

2N4220 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for 2N4220

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Tel: +852 95804164

2N4220 General Description

This high-performance transistor has a total power dissipation rating of 625 mW at 25 degrees Celsius, making it suitable for a wide range of applications. Its transition frequency (ft) of 120 MHz makes it an ideal choice for high-frequency applications where speed and accuracy are paramount. Additionally, the 2N4220 boasts a low noise figure, rendering it perfect for use in low-noise amplifier circuits

Key Features

High power, high frequency
Low current consumption, low noise
Rapid switching time, low distortion
Suitable for audio and radio applications
Compact size, easy to handle
Fully isolated, fully tested

Application

Ideal for audio processing
Perfect for frequency generators
Essential for phase locked loops

Specifications

Product Category	JFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Configuration	Single	Vds - Drain-Source Breakdown Voltage	15 V
Vgs - Gate-Source Breakdown Voltage	- 30 V	Gate-Source Cutoff Voltage	- 4 V
Drain-Source Current at Vgs=0	3 mA	Id - Continuous Drain Current	100 pA
Pd - Power Dissipation	300 mW	Series	2N422
Forward Transconductance - Min	1000 uS	Product Type	JFETs
Factory Pack Quantity	1	Subcategory	Transistors
Type	JFET	Unit Weight	0.100919 oz