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2N4299 +BOM

Bipolar (BJT) Transistor 250 V 1 A 20MHz 20 W Through Hole TO-66

  • Manufacturer:

    Central Semiconductor Corp

  • Mfr.Part #:

    2N4299

  • Datasheet:

    2N4299 Datasheet (PDF) pdf-icon

  • Current - Collector (Ic) (Max):

    1 A

  • Voltage - Collector Emitter Breakdown (Max):

    250 V

  • Vce Saturation (Max) @ Ib, Ic:

    750mV @ 5mA, 50mA

  • Current - Collector Cutoff (Max):

    600µA

  • EDA/CAD Models:

    eda-cad.png Request Free CAD Models for 2N4299

2N4299 General Description

Bipolar (BJT) Transistor 250 V 1 A 20MHz 20 W Through Hole TO-66

Specifications

Series - Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 250 V Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 600µA DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 10V
Power - Max 20 W Frequency - Transition 20MHz
Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Through Hole

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