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See Technical Specifications

2N4403TF +BOM

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 625 mW Through Hole TO-92-3

Manufacturer:

onsemi
Mfr.Part #:

2N4403TF
Datasheet:

2N4403TF Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

40 V
EDA/CAD Models:

Request Free CAD Models for 2N4403TF

2N4403TF General Description

From amplifiers to voltage regulators, the 2N4403TF excels in a variety of applications, offering consistent performance and smooth operation. Its PNP configuration ensures seamless integration with other components, making it a valuable asset in any electronics toolkit. Trust the 2N4403TF to deliver the performance you need, when you need it most

Key Features

Sophisticated signal processing
Reliable data backup
High-speed processor
User-friendly software

Application

LED lighting

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	750 mV
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	200 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	2N4403
Continuous Collector Current	600 mA	DC Current Gain hFE Max	300
Height	4.7 mm	Length	4.7 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	2000
Subcategory	Transistors	Technology	Si
Width	3.93 mm	Unit Weight	0.008466 oz