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2N4918 +BOM

Designed for efficiency, the Power 3 A, 80 V Bipolar PNP Transistor is a versatile component for amplifiers and other applications

2N4918 General Description

The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.

Key Features

  • Low Noise and Distortion
  • Silicon Epitaxial Process for High Reliability
  • Compact Package Dimensions
  • Fast Switching Time - 500 ns

Application

  • Microwave signal processing
  • Amplification in video

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 40 V Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 30 W
Gain Bandwidth Product fT 3 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C DC Collector/Base Gain hfe Min 40 at 50 mA, 1 V
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.831 $0.83
200+ $0.332 $66.40
500+ $0.320 $160.00
1000+ $0.316 $316.00

The prices below are for reference only.

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