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2N4923 +BOM

The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.

Key Features

  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement of PNP 2N4918, 2N4919, 2N4920
  • Pb-Free Packages are Available

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 80 V
Collector- Base Voltage VCBO 80 V Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 1 A Pd - Power Dissipation 30 W
Gain Bandwidth Product fT 3 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C DC Collector/Base Gain hfe Min 40 at 50 mA, 1 V
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si

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