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2N5962 +BOM

Compact low-noise transistor ideal for radio frequency application

2N5962 General Description

Bipolar (BJT) Transistor NPN 45 V 100 mA 625 mW Through Hole TO-92-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 45 V
Emitter- Base Voltage VEBO 8 V Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 625 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2N5962 Continuous Collector Current 100 mA
DC Collector/Base Gain hfe Min 600 DC Current Gain hFE Max 1400
Height 5.33 mm Length 5.2 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2000
Subcategory Transistors Technology Si
Width 4.19 mm Part # Aliases 2N5962_NL
Unit Weight 0.007090 oz

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