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2N6027RL1G +BOM

TO-92 (TO-226) Programmable Unijunction Transistor with 5.33mm Body Height available in 2000-REEL packaging

Manufacturer:

onsemi
Mfr.Part #:

2N6027RL1G
Datasheet:

2N6027RL1G Datasheet (PDF)
Voltage:

40V
Power Dissipation (Max):

300 mW
Voltage - Output:

11V
Voltage - Offset (Vt):

1.6 V
EDA/CAD Models:

Request Free CAD Models for 2N6027RL1G

2N6027RL1G General Description

Programmable Unijunction Transistor (UJT) 40V 300 mW TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Key Features

Programmable − RBB, η, IV and IP
Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (RG = 10 kΩ)
Pb−Free Packages are Available

Specifications

Voltage	40V	Power Dissipation (Max)	300 mW
Voltage - Output	11V	Voltage - Offset (Vt)	1.6 V
Current - Gate to Anode Leakage (Igao)	10 nA	Current - Valley (Iv)	50 µA
Current - Peak	2 µA	Base Product Number	2N6027

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In Stock: 9,937

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2N6027RL1G

onsemi

Availability: 9,937 PCS

TO-226-3,TO-92-3(TO-226AA)FormedLeads

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2N6027RL1G +BOM

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