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See Technical Specifications

2N6039G +BOM

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Manufacturer:

onsemi
Mfr.Part #:

2N6039G
Datasheet:

2N6039G Datasheet (PDF)
Configuration:

Single
Transistor Polarity:

NPN
Collector- Emitter Voltage VCEO Max:

80 V
Emitter- Base Voltage VEBO:

5 V
EDA/CAD Models:

Request Free CAD Models for 2N6039G

2N6039G General Description

Don't miss out on the opportunity to secure the 2N6039G NPN transistor for your projects. With its high V(br)ceo voltage rating and robust construction, this transistor is designed to deliver consistent performance in demanding environments. Stock up now before supplies run out and explore the alternative options available to meet your specific requirements

Key Features

Low Input Current - 2mA (Typ)
Fast Switching Time
High Surge Immunity - 10kV (Min)
Soft Starting and Stopping
Short-Circuit Protection Built-in
Low Thermal Resistance

Application

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

Specifications

Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	80 V
Emitter- Base Voltage VEBO	5 V	Collector- Base Voltage VCBO	80 V
Maximum DC Collector Current	4 A	Maximum Collector Cut-off Current	500 uA
Pd - Power Dissipation	40 W	Mounting Style	Through Hole
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Series	2N6039	Continuous Collector Current	4 A
DC Collector/Base Gain hfe Min	100, 500, 750	DC Current Gain hFE Max	15000
Height	11.04 mm	Length	7.74 mm
Product Type	Darlington Transistors	Factory Pack Quantity	500
Subcategory	Transistors	Width	2.66 mm
Unit Weight	0.068784 oz