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See Technical Specifications

2N6045 +BOM

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220

Manufacturer:

Solid State Inc.
Mfr.Part #:

2N6045
Datasheet:

2N6045 Datasheet (PDF)
Transistor Type:

NPN - Darlington
Current - Collector (Ic) (Max):

8 A
Voltage - Collector Emitter Breakdown (Max):

100 V
Vce Saturation (Max) @ Ib, Ic:

4V @ 80mA, 8A
EDA/CAD Models:

Request Free CAD Models for 2N6045

2N6045 General Description

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.

Key Features

High DC Current Gain -
h_FE = 2500 (Typ) @ I_C = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc -
V_CEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
V_CEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044
V_CEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage -
V_CE(sat) = 2.0 Vdc (Max) @ I_C = 4.0 Adc - 2N6040,41, 2N6043,44
V_CE(sat)= 2.0 Vdc (Max) @ I_C = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available

Specifications

Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	100 V	Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A
Current - Collector Cutoff (Max)	500µA	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 4V
Power - Max	75 W	Frequency - Transition	-
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole