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2N6055 +BOM

Darlington Transistors

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

2N6055 General Description

Bipolar (BJT) Transistor NPN 60 V 8 A 4MHz 100 W Through Hole TO-3

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection COLLECTOR Collector Current-Max (IC) 8 A
Collector-Base Capacitance-Max 200 pF Collector-Emitter Voltage-Max 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-204AA JESD-30 Code O-MBFM-P2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Temperature-Max 200 °C
Polarity/Channel Type NPN Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form PIN/PEG Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz VCEsat-Max 3 V

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