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2N6107G +BOM

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

2N6107G General Description

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

Key Features

  • Pb-Free Ready: Yes
    VCEO(sus) = 70 Vdc (Min)
  • Compact Design: TO-220AB
  • Data Sheet Available: Yes
    fT = 10 MHz (Min) @ IC = 500 mAdc
  • High Current Gain: Yes
    IC = 7.0 Adc (Min)
  • Wide Bandwidth: Yes
    fT = 4.0 MHz (Min) @ IC = 500 mAdc
  • Sustaining Voltage: VCEO(sus) = 70 Vdc (Min)
    Pb-Free Packages are Available

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 70 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 3.5 V
Maximum DC Collector Current 7 A Pd - Power Dissipation 40 W
Gain Bandwidth Product fT 10 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series 2N6107
Continuous Collector Current 7 A DC Collector/Base Gain hfe Min 30
Height 15.75 mm Length 10.53 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 50
Subcategory Transistors Technology Si
Width 4.83 mm Unit Weight 0.211644 oz

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