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2N6109G +BOM

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

Manufacturer:

onsemi
Mfr.Part #:

2N6109G
Datasheet:

2N6109G Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

Request Free CAD Models for 2N6109G

2N6109G General Description

Operating under extreme conditions is no problem for the 2N6109G transistor, with a maximum power dissipation of 600mW and a wide temperature range of -65°C to 200°C. This allows for consistent performance in a variety of settings, ensuring that your electronics operate smoothly and reliably

Key Features

The transistor's TO-220 package provides easy mounting and heat dissipation
The device is suitable for use in a wide range of applications
The transistor features high reliability and long lifespan

The device has low power consumption and high performance
It operates with high reliability and minimal maintenance
The device features fast switching times and excellent thermal stability

Application

SWITCHING

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	3.5 V
Maximum DC Collector Current	7 A	Pd - Power Dissipation	40 W
Gain Bandwidth Product fT	10 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	2N6109
Continuous Collector Current	7 A	DC Collector/Base Gain hfe Min	30
Height	15.75 mm	Length	10.53 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	50
Subcategory	Transistors	Technology	Si
Width	4.83 mm	Unit Weight	0.211644 oz