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2N6474 +BOM

2N6474 Power Bipolar Transistor

2N6474 General Description

Bipolar (BJT) Transistor NPN 120 V 4 A 4MHz 40 W Through Hole TO-220-3

Key Features

  • NPN medium-power linear regulator
  • Collector-to-base voltage of 80V
  • Low saturation current for high-efficiency power supply

Application

  • Communication equipment
  • Electronic control devices
  • Lighting control systems

Specifications

Packaging Tube Part Status Obsolete
Transistor Type NPN Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 120 V Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 4A
Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1.5A, 4V
Power - Max 40 W Frequency - Transition 4MHz
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole

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