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See Technical Specifications

2N6497 +BOM

Bipolar (BJT) Transistor NPN 250 V 5 A 5MHz 80 W Through Hole TO-220

Manufacturer:

onsemi
Mfr.Part #:

2N6497
Datasheet:

2N6497 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

250 V
EDA/CAD Models:

Request Free CAD Models for 2N6497

2N6497 General Description

Engineered with precision and expertise, the 2N6497 is optimized for efficiency and durability. Its exceptional performance characteristics make it an ideal choice for applications where reliability is paramount. Whether you are designing a new power supply unit or enhancing an existing circuit, the 2N6497 offers the features and capabilities required for success

Key Features

Wide Operating Range
Compact Design
Low Input Noise
Pb-Free Available

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V	Collector- Base Voltage VCBO	350 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	5 A	Pd - Power Dissipation	80 W
Gain Bandwidth Product fT	5 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	5 A
Height	9.28 mm	Length	10.28 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	50
Subcategory	Transistors	Technology	Si
Width	4.82 mm	Unit Weight	0.211644 oz