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Bipolar (BJT) Transistor NPN 250 V 500 mA 200MHz 625 mW Through Hole TO-92 (TO-226)
TO-92Manufacturer:
onsemi
Mfr.Part #:
2N6515
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
250 V
EDA/CAD Models:
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The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 250 V | Collector- Base Voltage VCBO | 250 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 500 mA | Pd - Power Dissipation | 625 mW |
Gain Bandwidth Product fT | 200 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 500 mA |
DC Collector/Base Gain hfe Min | 35 | Height | 5.33 mm |
Length | 5.2 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 5000 | Subcategory | Transistors |
Technology | Si | Width | 4.19 mm |
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